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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 2, 2005, Pages 869-873

Growth of AIN by the chemical vapor reaction process

(5) Hashimoto, Tadao a Fujito, Kenji a Samonji, Katsuya a Speck, James S a Nakamura, Shuji a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

AIN; Chloride; Dislocations; Epitaxy; Selective growth; Thick film growth

Indexed keywords

AMMONIUM COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTOR LASERS; SURFACE CHEMISTRY; THICK FILMS;

CHLORIDE; DISLOCATIONS; SELECTIVE GROWTH; THICK FILM GROWTH;

ALUMINUM NITRIDE;

EID: 17444416151 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.869 Document Type: Article

Times cited : (12)

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