Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2001, Pages 258-262

  Khamesra, A ^a   Lal, R ^a   Vasi, J ^a   Kumar, K P A ^a   Sin, J K O ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; HOT CARRIERS; IONIZING RADIATION; LOW TEMPERATURE EFFECTS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES;

DEVICE DEGRADATION; DEVICE GEOMETRY; RADIATION STRESSING;

THIN FILM TRANSISTORS;

EID: 0034819161     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors
2. Current status and future prospects of poly-Si devices
3. High-performance poly-Si TFTs fabricated using pulsed laser annealing and plasma CVD with low temperature processing
4. Threshold voltage, field-effect mobility, and gate-to-channel capacitance in polysilicon TFTs
5. The formation and annealing of hot-carrier-induced degradation in poly-Si TFTs MOSFET's, and SOI devices, and similarities to state-creation in alpha Si:H
6. Effects of temperature and electrical stress on the performance of thin-film transistors fabricated from undoped low-pressure chemical vapor deposited polycrystalline silicon
7. Physical models for degradation effects in polysilicon thin-film transistors