SCOPUS 정보 검색 플랫폼

Volumn 237-239, Issue 1 4 I, 2002, Pages 206-211

First principles and macroscopic theories of semiconductor epitaxial growth

(8) Shiraishi, Kenji a Oyama, Norihisa b Okajima, Ko c Miyagishima, Nori c Takeda, Kyozaburo c Yamaguchi, Hiroshi d Ito, Tomonori e Ohno, Takahisa b

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c WASEDA UNIVERSITY (Japan)

d Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

e MIE UNIVERSITY (Japan)

Author keywords

A1. Defects; A1. Growth models; A1. Stresses; A3. Molecular beam epitaxy

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRESS ANALYSIS;

MACROSCOPIC GROWTH;

MOLECULAR BEAM EPITAXY;

EID: 17344381039 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01903-0 Document Type: Article

Times cited : (15)

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