Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 9 A/B, 2000, Pages

  Okajima, Ko ^a   Takeda, Kyozaburo ^a   Oyama, Norihisa ^b   Ohta, Eiji ^b   Shiraishi, Kenji ^c   Ohno, Takahisa ^d  

^a WASEDA UNIVERSITY   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH;

ENERGETICS; HETEROEPITAXIAL GROWTH; PHENOMENOLOGICAL THEORY; STRANSKI-KRASTANOV (SK) ISLANDS;

SEMICONDUCTOR GROWTH;

EID: 0034269228     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l917     Document Type: Article

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