Kinematic mechanism of chemical mechanical polishing in ULSI manufacturing

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 3, 2005, Pages 606-612

  Su, Jianxiu ^a,b   Guo, Dongming ^a   Kang, Renke ^a   Jin, Zhuji ^a   Li, Xiujuan ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b HENAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Abrasives; Chemical mechanical polishing; Material removal mechanism; Material removal rate; Nonuniformity

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; SILICON WAFERS;

ABRASIVE PARTICLE TRACKS; KINEMATIC MECHANISM; MATERIAL REMOVAL MECHANISM; MATERIAL REMOVAL RATE (MRR); NONUNIFORMITY; POLISHING HEAD; POLISHING TABLE;

ULSI CIRCUITS;

EID: 17244368828     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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