Chemic-mechanical polishing of silicon wafer in ULSI

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 1, 2004, Pages 115-119

  Zhang, Kailiang ^a   Liu, Yuling ^a   Wang, Fang ^b   Li, Zhiguo ^a   Han, Danghui ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Chemical mechanical polishing; Dynamic; Nano abrasive; Silicon substrate; ULSI

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; PARTICLE SIZE ANALYSIS; PH; SILICON WAFERS; SUBSTRATES;

NANO ABRASIVE; SILICON SUBSTRATE;

ULSI CIRCUITS;

EID: 2942552552     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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3. Steigerwald J M, Murarka S P, Gutmann R J. Chemical mechanical planarization of microelectronic materials. New York: John Wiley and Sons, 1996
4. Wang Hongying, Liu Yuling, Zhang Dechen. A new type of copper CMP slurry in ULSI. Chinese Journal of Semiconductors, 2002, 23(2): 217(in Chinese)
5. Wang Xin, Liu Yuling. CMP slurry of copper interconnection for ULSI. Chinese Journal of Semiconductors, 2002, 23(9): 1006(in Chinese)
6. Liu Yuling, Zhang Kailiang, Wang Fang. Investigation on the final polishing liquid and technique of silicon substrate in ULSI. The 8th IUMRS International Conference on Electronic Materials, (IUMRS-ICEM 2002) Xi'an, China, 2002: 500
7. Zhang Kailiang, Liu Yuling, Wang Fang. Study on controlling the adsorption state of particle on the polished silicon wafer. 2001 6th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2001: 464