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Applied Physics A: Materials Science and Processing

Volumn 68, Issue 1, 1999, Pages 19-24

Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures

(3) Chen, C H a Gosele U M a Tan, T Y a

a Duke University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; FERMI LEVEL; IONIZATION OF SOLIDS; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SOLUBILITY;

GERMANIUM SILICIDE;

HETEROJUNCTIONS;

EID: 0032785168 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050848 Document Type: Article

Times cited : (21)

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