In-situ studies of the growth of amorphous and nanocrystalline silicon using real time spectroscopic ellipsometry

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 679-683

  Levi, D H ^a   Nelson, B P ^a   Iwanizcko, E ^a   Teplin, C W ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Hot wire deposition; In situ; Nanocrystalline silicon; Spectroscopic ellipsometry

Indexed keywords

CRYSTALLINE MATERIALS; ELLIPSOMETRY; FILM GROWTH; HYDROGEN; PHASE TRANSITIONS; PRESSURE EFFECTS; REAL TIME SYSTEMS; SILICON; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

HOT WIRE DEPOSITION; IN SITU; NANOCRYSTALLINE SILICON; SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS FILMS;

EID: 17144432934     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.235     Document Type: Conference Paper

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