Charge carrier transport in Si/CaF2 heterostructures controlled by forming bias

Physica Status Solidi (A) Applied Research

Volumn 181, Issue 2, 2000, Pages 561-568

  Menard S ^a   Kholod, A N ^a,b   Liniger, M ^a,c   Bassani, F ^a   Borisenko, V E ^b   Arnaud D'Avitaya, F ^a  

^a Cent de Recherche sur les Mecanismes   (France)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^c Biel School of Engineering   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM FLUORIDE; CHARGE CARRIER TRANSPORT; FORMING BIAS; NEGATIVE DIFFERENTIAL RESISTANCE;

CALCIUM COMPOUNDS; CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON;

HETEROJUNCTIONS;

EID: 0034294392     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200010)181:2<561::AID-PSSA561>3.0.CO;2-T     Document Type: Article

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