Maximization of active as doping in (selective) epitaxial Si and SiGe layers

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 1123-1133

  Loo, Roger ^a   Bajolet, Philippe ^b   Bauer, Matthias ^c   Maes, Jan Willem ^b   Caymax, Matty ^a   Arena, Chantal ^c  

^a IMEC   (Belgium)

^b ASM BELGIUM   (Belgium)

^c ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; ION IMPLANTATION; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; THERMAL EFFECTS;

DIFFUSION CONSTANT; GROWTH CONDITIONS; MATERIAL QUALITY; MICRO-LOADING;

SEMICONDUCTOR DOPING;

EID: 17044374026     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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