Achieving a SiGe HBT epitaxial emitter with novel low thermal budget technique

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 347-349

  Brabant, Paul ^a   Wen, Jianqing ^a,b   Italiano, Joe ^a   Landin, Trevan ^a   Cody, Nyles ^a   Haen, Lee ^a  

^a ASM AMERICA   (United States)

^b ASM WPE   (Singapore)

Author keywords

Emitter; Epitaxy; Low frequency noise; Low thermal budget; SiGe HBT

Indexed keywords

CARBON; EPITAXIAL GROWTH; FREQUENCIES; INTERFACES (MATERIALS); MICROWAVE CIRCUITS; OXYGEN; SILICON COMPOUNDS; THERMAL EFFECTS;

EMITTERS; LOW FREQUENCY NOISE; LOW THERMAL BUDGET; SIGE HBT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1142280306     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.105     Document Type: Conference Paper

References (5)

1. A. Gruhle, IEEE BCTM Proceedings, 2001, p. 19.
2. H.A.W. Markus, T.G.M. Kleinpenning, Low-frequency noise in polysilicon emitter bipolar transistors, IEEE Trans. Electron. Devices, (42) (4) (1995) 720-727.
3. S. Jouan, et al., A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters, IEEE Trans. Electron. Devices, (46) (7) (1999) 1525-1531.
4. Gruhle A., Mahner C. Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators. Electron. Lett. 33(24):1997;2050.
5. J. Wen, P. Brabant, J. Italiano, Impact of a controllable base-emitter interfacial oxide layer on the SiGe HBT device, in: Proceedings of the Second International Workshop on NewGroup IV(Si-Ge-C) Semiconductors, Japan, June 2002.