Control of arsenic doping during low temperature CVD epitaxy of silicon (100)

Journal of the Electrochemical Society

Volumn 147, Issue 11, 2000, Pages 4301-4304

  Van Noort, Wibo D ^a   Nanver, L K ^a   Slotboom, J W ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; SEMICONDUCTOR DOPING;

AUTODOPING; SURFACE CONCENTRATION;

SEMICONDUCTING SILICON;

EID: 0034322216     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1394058     Document Type: Article

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