Characterisation of high-energy proton irradiation induced recombination centers in silicon

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 371-376

  Kaniava, A ^a,b   Vanhellemont, J ^a   Simoen, E ^a   Claeys, C ^a   Gaubas, E ^b  

^a IMEC   (Belgium)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; DEFECTS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE DISTRIBUTION;

CARRIER LIFETIME MEASUREMENTS; HIGH ENERGY PROTON; IRRADIATION-INDUCED DEFECTS; NON DESTRUCTIVE; RECOMBINATION ACTIVITY; RECOMBINATION CENTERS; TEMPERATURE DEPENDENCE; VACANCY-RELATED DEFECTS;

PROTON IRRADIATION;

EID: 17544377287     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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