Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain

Electrochemical and Solid-State Letters

Volumn 7, Issue 2, 2004, Pages

  Zan, Hsiao Wen ^a   Chang, Ting Chang ^b   Shih, Po Sheng ^a   Peng, Du Zen ^a   Kuo, Po Yi ^a   Huang, Tiao Yuan ^a   Chang, Chun Yen ^a   Liu, Po Tsun ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); GROWTH (MATERIALS); LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS; TUNGSTEN; ULTRATHIN FILMS;

SELF-ALIGNED SILICIDE; ULTRATHIN CHANNELS;

PLASTIC FILMS;

EID: 1642632730     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1635093     Document Type: Article

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