Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH4 Reduction of WF6

Journal of the Electrochemical Society

Volumn 148, Issue 4, 2001, Pages

  Takahashi, Mitsutoshi ^a   Takayama, Kazuhiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042060134     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1357185     Document Type: Article

References (19)

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