Low thermal budget salicide with germanium large angle tilt implant and preamorphization to improve the performance of thin film SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 153-154

  Hsiao, Tommy C ^a   Liu, Ping ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THIN FILM DEVICES;

FLOATING BODY EFFECTS; LARGE ANGLE TILT IMPLANTS (LATI);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032308096     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)