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Volumn 36, Issue 4, 2004, Pages 327-329

Reliable high-efficiency high-brightness laser diode bars at 940 nm

Author keywords

III V Semiconductors; Quantum well lasers; Semiconductor laser arrays

Indexed keywords

DEGRADATION; ENERGY EFFICIENCY; HEAT SINKS; HETEROJUNCTIONS; LASER BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PUMPING (LASER); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

EID: 1642602037     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlastec.2003.09.017     Document Type: Article
Times cited : (10)

References (9)
  • 3
    • 0033558478 scopus 로고    scopus 로고
    • High-efficiency diode lasers at high output power
    • Wang J., Smith B., Xie X., Wang X., Burnham G. High-efficiency diode lasers at high output power. Appl Phys Lett. 74(11):1999;1525-1527.
    • (1999) Appl Phys Lett , vol.74 , Issue.11 , pp. 1525-1527
    • Wang, J.1    Smith, B.2    Xie, X.3    Wang, X.4    Burnham, G.5
  • 9
    • 0000922289 scopus 로고    scopus 로고
    • Long-term reliability of Al-free InGaAsP/GaAs (λ =808 nm) lasers at high-power high-temperature operation
    • Diaz J., Yi H.J., Razeghi M., Burnham G.T. Long-term reliability of Al-free InGaAsP/GaAs. (λ =808 nm) lasers at high-power high-temperature operation Appl Phys Lett. 71(21):1997;3042-3044.
    • (1997) Appl Phys Lett , vol.71 , Issue.21 , pp. 3042-3044
    • Diaz, J.1    Yi, H.J.2    Razeghi, M.3    Burnham, G.T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.