66% CW wallplug efficiency from Al-free 0.98μm-emitting diode lasers

Electronics Letters

Volumn 32, Issue 21, 1996, Pages 2012-2013

  Botez, D ^a   Mawst, L J ^a   Bhattacharya, A ^a   Lopez, J ^a   Li, J ^a   Kuech, T F ^a   Iakovlev, V P ^b   Suruceanu, G I ^b   Caliman, A ^b   Syrbu, A V ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

Gallium arsenide; Gallium indium arsenide; Semiconductor junction lasers

Indexed keywords

COATING TECHNIQUES; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FERMI LEVEL; OPTICAL WAVEGUIDES; OPTIMIZATION; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL CONDUCTIVITY;

BROAD WAVEGUIDES TYPE; DIFFERENTIAL QUANTUM EFFICIENCY; LOW REACTIVITY; QUASI FERMI LEVEL DIFFERENCE; THERMOELECTRIC COOLING; THRESHOLD CURRENT; WALLPLUG EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 0030264245     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961300     Document Type: Article

References (9)

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