Modification of the recombination activity of dislocations in silicon by hydrogenation, phosphorous diffusion and heat treatments

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 287-292

  Seifert, W ^a   Knobloch, K ^a   Kittler, M ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; DEFECTS; DIFFUSION; HYDROGENATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; ANNEALING; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; LOW TEMPERATURE EFFECTS; PHOSPHORUS; QUENCHING;

DISLOCATION ACTIVITY; ELECTRON-BEAM-INDUCED CURRENT; MULTICRYSTALLINE SI; PHOSPHOROUS DIFFUSION; PHOSPHORUS DIFFUSION; RECOMBINATION ACTIVITY; SHALLOW STATE; TEMPERATURE DEPENDENCIES;

PHOSPHORUS; SEMICONDUCTING SILICON;

ELECTRON BEAM INDUCED CURRENT (EBIC) MEASUREMENTS;

EID: 16944363082     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.287     Document Type: Article

References (12)

1. M. Kittler, W. Seifert, phys. stat. sol. (a) 138, 687 (1993).
2. M. Kittler, W. Seifert, Mater. Sci. Eng. B 24, 78 (1994).
3. M. Kittler, C. Ulhaq-Bouillet, V. Higgs, J. Appl. Phys. 78, 4573 (1995).
4. Z. J. Radzimski, A. Buczkowski, G. A. Rozgonyi, Solid State Phenomena Vol. 32-33, 309 (1993).
5. M. Kittler, W. Seifert, V. Higgs, MRS Proc. Vol. 378, 989 (1995).
6. J. L. Mariani, B. Pichaud, F. Minari, S. Martinuzzi, J. de Phys. III-12, 187 (1991).
7. K. Knobloch, M. Kittler, W. Seifert, J. J. Simon, I. Perichaud, submitted for publication in J. Appl. Phys.
8. I. Hanke, PhD Thesis, Cuvillier Verlag Göttingen, 1996.
9. M. Kittler, K. Knobloch, W. Seifert, in preparation.
10. K. Knobloch, PhD Thesis, 1997.
11. K. Knobloch, in preparation.
12. V. Higgs, Solid State Phenomena Vol. 32-33, 291 (1993).