Structure and Electronic Properties of Nitrogen Defects in Silicon

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 93-98

  Jones, R ^a   Hahn, I ^a   Goss, J P ^b   Briddon, P R ^b   Oberg S ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Nitrogen; Silicon

Indexed keywords

ANNEALING; BINDING ENERGY; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIMERS; ELECTRONIC PROPERTIES; GROWTH (MATERIALS); ION IMPLANTATION; LATTICE VIBRATIONS; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; PRECIPITATION (CHEMICAL); PROBABILITY DENSITY FUNCTION; STRUCTURE (COMPOSITION); THERMAL EFFECTS;

LOCAL VIBRATIONAL MODES (LVMS); SPLIT-INTERSTITIAL STRUCTURES;

SEMICONDUCTING SILICON;

EID: 1642520013     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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