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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 11 B, 2003, Pages

Synthesis of (Bi,Nd)4(Ti,Ge)3O12 Thin Films by Chemical Solution Deposition

(6) Sakamoto, Wataru a Mizutani, Yu Ki a Iizawa, Naoya b Yogo, Toshinobu a Hayashi, Takashi b Hirano, Shin Ichi a

a NAGOYA UNIVERSITY (Japan)

b SHONAN INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

(Bi,Nd)4Ti3O12; Chemical solution deposition; Ferroelectric properties; Ge substitution; Surface morphology; Thin film

Indexed keywords

FERROELECTRICITY; GERMANIUM; MICROSTRUCTURE; SEMICONDUCTING BISMUTH COMPOUNDS; SUBSTITUTION REACTIONS; SURFACE PROPERTIES; SYNTHESIS (CHEMICAL); TITANIUM;

CRYSTALLIZED FILMS; FERROELECTRIC PROPERTIES;

FERROELECTRIC THIN FILMS;

EID: 1642495745 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1384 Document Type: Article

Times cited : (10)

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