High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2337-2341

  Yang, Hangsheng ^a   Iwamoto, Chihiro ^a   Yoshida, Toyonobu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGE ANALYSIS; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; OPTICAL RESOLVING POWER; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ION MILLING; PLASMA POWER;

CUBIC BORON NITRIDE;

EID: 1642395735     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644897     Document Type: Article

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