Phonons in Ge/Si quantum dot structures: Influence of growth temperature

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 464-468

  Milekhin, A G ^a   Nikiforov, A I ^a   Ladanov, M Yu ^a   Pchelyakov, O P ^a   Lobanov, D N ^b   Novikov, A V ^b   Krasil'nik, Z F ^b   Schulze, S ^c   Zahn, D R T ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Confinement; Phonons; Quantum dots; Raman spectroscopy

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGE ANALYSIS; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SOLID SOLUTIONS; SUPERLATTICES; TENSORS; TRANSMISSION ELECTRON MICROSCOPY;

CONFINEMENT; STRAIN TENSORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642377515     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.051     Document Type: Conference Paper

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