Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 394-398

  Giannazzo, F ^a,b   Goghero, D ^b   Raineri, V ^b   Mirabella, S ^a   Priolo, F ^a   Liotta, S F ^c   Rinaudo, S ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; SCANNING; SEMICONDUCTING SILICON;

CAPACITANCE-VOLTAGE CURVES; SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR DOPING;

EID: 1642353564     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1622671     Document Type: Conference Paper

References (12)

1. V. V. Zavyalov, J. S. McMurray, and C. C. Williams, J. Appl. Phys. 85, 7774 (1999).
2. F. Giannazzo, F. Priolo, V. Raineri, and V. Privitera, Appl. Phys. Lett. 76, 2565 (2000).
3. L. Ciampolini, F. Giannazzo, M. Ciappa, W. Fichtner, and V. Raineri, Mater. Sci. Semicond. Process. 4, 85 (2001).
4. ISE TCAD, Dessis Reference Manual, release 8.0, Zurich (2002).
5. D. Goghero, F. Giannazzo, and V. Raineri, Appl. Phys. Lett. 81, 1824 (2002).
6. D. E. McBride, J. J. Kopanski, and B. J. Belzer, AIP Conf. Proc. 550, 657 (2001).
7. H. Yabuhara, M. Ciappa, and W. Fichtner, J. Vac. Sci. Technol. B 20, 783 (2002).
8. M. Lundstrom, Foundamentals of Carrier Transport (Cambridge University Press, Cambridge, U.K., 2000).
9. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984).
10. S. E. Laux, IEEE Trans. Comput.-Aided Des. CAD-4, 472 (1985).
11. R. Stephenson, A. Verhulst, P. De Wolf, M. Caymax, and W. Vandervorst, Appl. Phys. Lett. 73, 2597 (1998).
12. J. Smoliner, B. Basnar, S. Golka, E. Gornik, Loffler, M. Schatzmayr, and H. Enichlmair, Appl. Phys. Lett. 73, 2597 (1998).