|
Volumn 22, Issue 1, 2004, Pages 432-438
|
Nondestructive dopant profile measurement and its quantitative analysis using the nanocapacitance-voltage method
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ALGORITHMS;
BANDWIDTH;
CAPACITANCE;
CAPACITORS;
COMPUTER SIMULATION;
ELECTRIC POTENTIAL;
INTEGRATED CIRCUITS;
NONDESTRUCTIVE EXAMINATION;
RESONATORS;
SCANNING;
SECONDARY ION MASS SPECTROMETRY;
SENSITIVITY ANALYSIS;
SENSORS;
DOPANT PROFILES;
SCANNING CAPACITANCE MICROSCOPY (SCM);
SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM);
SEMICONDUCTOR DOPING;
|
EID: 1642277073
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1640657 Document Type: Conference Paper |
Times cited : (2)
|
References (10)
|