Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 312-316

  Bougeard, D ^a   Tan, P H ^a   Sabathil, M ^a   Vogl, P ^a   Abstreiter, G ^a   Brunner, K ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Intraband; Quantum dots; Resonant Raman; SiGe; Valence band structure calculations

Indexed keywords

BAND STRUCTURE; GROUND STATE; PHOTOCURRENTS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SELF ASSEMBLY; X RAY DIFFRACTION ANALYSIS;

BAND EDGE SEPARATION; INTRABAND TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642276607     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.019     Document Type: Conference Paper

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