Size dependent phenomena during the formation of Gd and Fe suicide thin films

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 565-572

  Molnar G L ^a   Peto G ^a   Horvath Z E ^a   Zsoldos, E ^a   Khanh N Q ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Silicides; Size effects; Solid phase reaction; Thin films

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; NUCLEATION; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SILICIDES; SOLID PHASE REACTIONS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031269286     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00161-5     Document Type: Article

References (17)

1. A.H. Reader, A.H. van Ommen, P.J.W. Weijs, R.A.M. Wolters, D.J. Oostra, Transition metal suicides in silicon technology. Rep. Prog. Phys. 56 (1992) 1397-1467.
2. U. Gösele, K.N. Tu, Growth kinetics of planar binary diffusion couples: "thin film case" versus "bulk cases", J. Appl. Phys. 53 (1982) 3252-3260.
3. P.M. d'Heurle, Nucleation of a new phase from the interaction of two adjacent phases: some suicides, J. Mater. Res. 3 (1988) 167-195.
4. G. Molnár, G. Petö, E. Kótai, E. Zsoldos, J. Gyulai, Oxidation of Gd thin films on Si substrates via grain boundaries, Surf. Interf. Analysis 19 (1992) 469-472.
5. 2 formation, J. Vac. Sci. Technol. A 11 (1993) 6-10.
6. K.N. Tu, R.D. Thompson, B.Y. Tsaur, Low Schottky barrier of rare-earth suicide on n-Si, Appl. Phys. Lett. 38 (1981) 626-628.
7. 1.7 heterostructure: tunable internal photoemission sensor, Appl. Phys. Lett. 60 (1992) 1166-1168.
8. R.D. Thompson, B.Y. Tsaur, K.N. Tu, Contact reaction between Si and rare earth metals, Appl. Phys. Lett. 38 (1981) 535-537.
9. G. Molnár, I. Geröcs, G. Petö, E. Zsoldos, E. Jároli, J. Gyulai, Thickness-dependent formation of Gd-silicide compounds, J. Appl. Phys. 64 (1988) 6746-6749.
10. I. Geröcs, G. Molnár, E. Jároli, E. Zsoldos, G. Petö, J. Gyulai, E. Bugiel, Epitaxy of orthorhombic gadolinium disilicide on < 100 > silicon, Appl. Phys. Lett. 51 (1987) 2144-2145.
11. 1.7 on 〈111〉 Si by solid phase reaction, Appl. Phys. Lett. 58 (1991) 249-250.
12. W.K. Chu, S.S. Lau, J.W. Mayer, H. Müller, K.N. Tu, Implanted noble gas atoms as diffusion markers in silicide formation, Thin Solid Films 25 (1975) 393-402.
13. M.C. Bost, J.E. Mahan, A clarification of the index of refraction of beta-iron disilicide, J. Appl. Phys. 64 (1988) 2034-2037.
14. C.H. Stuhlmann, J. Schmidt, H. Ibach, Semiconducting iron disilicide films on Si(111): a high resolution electron energy loss spectroscopy study, J. Appl. Phys. 72 (1992) 5905-5911.
15. S.S. Lau, J.S.-Y. Feng, J.O. Olowolafe, M.-A. Nicolet, Iron suicide thin film formation at low temperatures, Thin Solid Films 25 (1975) 415-422.
16. H.C. Cheng, T.R. Yew, L.J. Chen, Interfacial reactions of iron thin films on silicon, J. Appl. Phys. 57 (1985) 5246-5250.
17. W.A. Henle, M.G. Ramsey, P.P. Netzer, R. Cimino, W. Braun, Thermal evolution of the Gd/Si(111) interface: formation of epitaxial Gd silicide, Solid State Commun. 71 (1989) 657-660.