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Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 444-448

Electrical characteristics of V 2 O 5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing

(2) Yoon, M H a Im, Seongil a

a Yonsei University (South Korea)

Author keywords

Oxygen stoichiometry; Rapid thermal annealing; Semiconducting properties; V 2 O 5

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; MORPHOLOGY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; STOICHIOMETRY; THIN FILMS; VANADIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

METALLIC PHASES; OXYGEN STOICHIOMETRY; SEMICONDUCTING PROPERTIES; V2O5 THIN FILMS;

SEMICONDUCTING FILMS;

EID: 15944405292 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.10.100 Document Type: Conference Paper

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.