Effect of Ar pressure on properties of ZnO:Al films prepared by RF magnetron sputtering

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 23, Issue 10, 2002, Pages 1078-1082

  Song, Dengyuan ^a   Wang, Yongqing ^a   Sun, Rongxia ^a   Zong, Xiaoping ^a   Guo, Baozeng ^a  

^a HEBEI UNIVERSITY   (China)

Author keywords

Aluminum doped; Ar pressure; RF magnetron sputtering; SEM surface morphology; ZnO film

Indexed keywords

ALUMINUM; ARGON; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; SEMICONDUCTING FILMS; VAPOR PRESSURE;

ALUMINUM DOPED ZINC OXIDE FILM; OPTICAL BAND GAP; RADIO FREQUENCY MAGNETRON SPUTTERING; TRANSPARENT CONDUCTIVE OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0036815522     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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