Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 305-309

  Sanorpim, S ^a,b   Takuma, E ^a   Katayama, R ^a   Ichinose, H ^a   Onabe, K ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345687291     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303463     Document Type: Conference Paper

References (9)

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