Chemical kinetics and design of gas inlets for III-V growth by MOVPE in a quartz showerhead reactor

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 47-51

  Li, Zhi Qiang ^a   Zhou, Vivian ^a   Li, Simon ^a   Rao, T Sudersena ^b   Jiang, W Y ^b   Watkins, S P ^b  

^a Crosslight Software Inc   (Canada)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

A1. Computer simulation; A1. Surface process; A1. Vertical reactor; A3. Metalorganic vapor phase epitaxy

Indexed keywords

COMPUTER SIMULATION; DATA REDUCTION; FIBER OPTICS; GASES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY;

GAS INLETS; GROWTH DATA; SURFACE PROCESSES; VERTICAL REACTOR;

INTAKE SYSTEMS;

EID: 9944253686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.112     Document Type: Conference Paper

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