Device performance of AlGaN-based 240 - 300 nm deep UV LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5530, Issue , 2004, Pages 38-47

  Fischer, A J ^a   Allerman, A A ^a   Crawford, M H ^a   Bogart, K H A ^a   Lee, S R ^a   Kaplar, R J ^a   Chow, W W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

AlGaN; Light emitting diodes; UV LED

Indexed keywords

ALGAN; DIRECT CURRENT OPERATIONS; OUTPUT POWER; PEAK INTENSITIES; UV LED;

ARCHITECTURAL DESIGN; DC MACHINERY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FLIP CHIP DEVICES; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 15744401355     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.567103     Document Type: Conference Paper

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