Electrical conduction mechanism in metal-ZrO2-silicon capacitor structures

Journal of the Electrochemical Society

Volumn 152, Issue 3, 2005, Pages

  Wang, Ming Tsong ^a   Wang, Tsung Hong ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; HIGH TEMPERATURE EFFECTS; MISFET DEVICES; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITOR STRUCTURES; ELECTRIC CONDUCTION; ENERGY BAND; SCHOTTKY EMISSION;

ZIRCONIA;

EID: 15744400014     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1855833     Document Type: Article

References (13)

1. J. Y. M. Lee and B. C. Lai, in Ferroelectric and Dielectric Thin Films, p. 1, H. S. Nalwa, Editor, Academic Press, New York (2002-2001).
2. S. Y. Lee, H. Kim, P. C. Mclntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett., 82, 2874 (2003).
3. R. Mahapatra, J. H. Lee, S. Maiktp, G. S. Kar, A. Dhar, N. M. Hwang, D. Y. Kim, B. K. Mathur, and S. K. Ray, Appl. Phys. Lett., 82, 2320 (2003).
4. W. K. Chim, T. H. Ng, B. H. Koh, W. K. Choi, J. X. Zheng, C. H. Tung, and A. Y. Du, J. Appl. Phys., 93, 4788 (2003).
5. T. Yamaguchi, H. Satake, N. Fukushima, and A. Toriumi, Tech. Dig. - Int. Electron Devices Meet., 2000, 2.1.1.
6. J. P. Chang and Y. S. Lin, Appl. Phys. Lett., 79, 3666 (2001).
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York (1981).
8. C. R. Crowell and S. M. Sze, Solid-State Electron., 8, 1035 (1966).
9. M. Houssa, M. Tuorinen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. Heyns, J. Appl. Phys., 87, 8615 (2000).
10. V. V. Afanas'ev, M. Houssa, and A. Stesmans, Appl. Phys. Lett., 78, 3073 (2001).
11. H. Ishii, A. Nakajima, and S. Yokayama, J. Appl. Phys., 95, 536 (2004).
12. J. R. Yeargan and H. L. Taylor, J. Appl. Phys., 39, 5600 (1968).
13. M. T. Wang, C. W. Chang, and J. Y. M. Lee, To be published.