Surface reconstructions and stabilizing mechanism of the GaAs(311)A surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 3, 2005, Pages

  Taguchi, Akihito ^a   Shiraishi, Kenji ^b  

^a NTT Basic Research Laboratories   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

ARTICLE; CHEMICAL BOND; COMPLEX FORMATION; DIMERIZATION; ELECTRON; MATHEMATICAL ANALYSIS; MATHEMATICAL MODEL; SURFACE PROPERTY;

EID: 15544388415     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.035349     Document Type: Article

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