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Volumn 39, Issue 7 B, 2000, Pages 4298-4301

Energetics of InAs thin films and islands on the GaAs(001) substrate

Author keywords

Ab initio calculations; GaAs; Heteroepitaxy; InAs; Semiconductor surfaces; Surface energies; Thin films; Wetting layer

Indexed keywords

ARSENIC COMPOUNDS; ELASTICITY; EPITAXIAL GROWTH; INDIUM COMPOUNDS; METALLIC FILMS; MONOLAYERS; MORPHOLOGY; SEMICONDUCTOR GROWTH; WETTING;

HETEROEPITAXY; SURFACE ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034227233 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4298 Document Type: Article

Times cited : (17)

References (16)

1
- 0031559979
- J. G. Belk, C. F. McConville, J. L. Sudijono, T. S. Jones and B. A. Joyce: Surf. Sci. 387 (1997) 213.
- (1997) Surf. Sci. , vol.387 , pp. 213
- Belk, J.G.¹ McConville, C.F.² Sudijono, J.L.³ Jones, T.S.⁴ Joyce, B.A.⁵

2
- 33244468006
- V. Bressler-Hill, A. Lorke, S. Varma, P. M. Petroff, K. Pond and W. H. Weinberg: Phys. Rev. B 50 (1994) 8479.
- (1994) Phys. Rev. B , vol.50 , pp. 8479
- Bressler-Hill, V.¹ Lorke, A.² Varma, S.³ Petroff, P.M.⁴ Pond, K.⁵ Weinberg, W.H.⁶

3
- 0348043711
- D. Leonard, K. Pond and P. M. Petroff: Phys. Rev. B 50 (1994) 11687.
- (1994) Phys. Rev. B , vol.50 , pp. 11687
- Leonard, D.¹ Pond, K.² Petroff, P.M.³

4
- 25044447375
- J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André and O. Vatel: Appl. Phys. Lett. 64 (1994) 196.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 196
- Moison, J.M.¹ Houzay, F.² Barthe, F.³ Leprince, L.⁴ André, E.⁵ Vatel, O.⁶

5
- 0001627890
- R. Heitz, T. R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen and A. Madhukar: Phys. Rev. Lett. 78 (1997) 4071.
- (1997) Phys. Rev. Lett. , vol.78 , pp. 4071
- Heitz, R.¹ Ramachandran, T.R.² Kalburge, A.³ Xie, Q.⁴ Mukhametzhanov, I.⁵ Chen, P.⁶ Madhukar, A.⁷

6
- 0031381645
- E. Pehlke, N. Moll, A. Kłey and M. Scheffler: Appl. Phys. A 65 (1997) 525.
- (1997) Appl. Phys. A , vol.65 , pp. 525
- Pehlke, E.¹ Moll, N.² Kłey, A.³ Scheffler, M.⁴

7
- 0001089151
- N. Moll, M. Scheffler and E. Pehlke: Phys. Rev. B 58 (1998) 4566.
- (1998) Phys. Rev. B , vol.58 , pp. 4566
- Moll, N.¹ Scheffler, M.² Pehlke, E.³

8
- 0000806867
- L. G. Wang, P. Kratzer, M. Scheffler and N. Moll: Phys. Rev. Lett. 82 (1999) 4042.
- (1999) Phys. Rev. Lett. , vol.82 , pp. 4042
- Wang, L.G.¹ Kratzer, P.² Scheffler, M.³ Moll, N.⁴

9
- 0000548855
- B. A. Joyce, T. S. Jones and J. G. Belk: J. Vac. Sci. Technol. B 16 (1998) 2373.
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2373
- Joyce, B.A.¹ Jones, T.S.² Belk, J.G.³

10
- 0031362068
- M. Bockstedte, A. Kley, J. Neugebauer and M. Scheffler: Comput. Phys. Commun. 107 (1997) 187.
- (1997) Comput. Phys. Commun. , vol.107 , pp. 187
- Bockstedte, M.¹ Kley, A.² Neugebauer, J.³ Scheffler, M.⁴

11
- 26144450583
- J. P. Perdew and A. Zunger: Phys. Rev. B 23 (1981) 5048.
- (1981) Phys. Rev. B , vol.23 , pp. 5048
- Perdew, J.P.¹ Zunger, A.²

12
- 0000948663
- K. Shiraishi: J. Phys. Soc. Jpn. 59 (1990) 3455.
- (1990) J. Phys. Soc. Jpn. , vol.59 , pp. 3455
- Shiraishi, K.¹

13
- 5844306937
- D. R. Hamann: Phys. Rev. B 40 (1989) 2980.
- (1989) Phys. Rev. B , vol.40 , pp. 2980
- Hamann, D.R.¹

14
- 0001161603
- L. Kleinman and D. M. Bylander: Phys. Rev. Lett. 48 (1982) 1425.
- (1982) Phys. Rev. Lett. , vol.48 , pp. 1425
- Kleinman, L.¹ Bylander, D.M.²

15
- 0033148229
- M. Fuchs and M. Scheffler: Comp: Phys. Commun. 116 (1999) 67.
- (1999) Comp: Phys. Commun. , vol.116 , pp. 67
- Fuchs, M.¹ Scheffler, M.²

16
- 0030148661
- V. A. Shchukin, N. N. Ledentsov, M. Grundmann, P. S. Kop'ev and D. Bimberg: Surf. Sci. 352-354 (1996) 117.
- (1996) Surf. Sci. , vol.352-354 , pp. 117
- Shchukin, V.A.¹ Ledentsov, N.N.² Grundmann, M.³ Kop'ev, P.S.⁴ Bimberg, D.⁵

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