High-field electron transport controlled by optical phonon emission in nitrides

International Journal of High Speed Electronics and Systems

Volumn 12, Issue 4, 2002, Pages 1057-1081

  Komirenko, S M ^a   Kim, K W ^a   Kochelap, V A ^b   Stroscio, M A ^c  

^a North Carolina State University   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c University of Illinois at Chicago   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DISTRIBUTION; OPTICAL PHONON EMISSION;

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MAXWELL EQUATIONS; MONTE CARLO METHODS; OPTOELECTRONIC DEVICES; PHONONS;

NITRIDES;

EID: 1542789555     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156402001927     Document Type: Article

References (41)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, "GaN: Processing, defects, and devices" J. Appl. Phys., 86 (1999) 1-78.
2. D. K. Ferry, "High-field transport in wide-band-gap semiconductors", Phys. Rev. B, 12 (1975) 2361-2369.
3. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, "Monte-Carlo calculation of velocity-field relationship for gallium nitride", Appl. Phys. Lett., 26 (1975) 625-627.
4. B. Gelmont, K. Kim, and M. Shur, "Monte-Carlo simulation of electron-transport in gallium nitride", J. Appl. Phys., 74 (1993) 1818-1821.
5. N. S. Mansour, K. W. Kim, and M. A. Littlejohn, "Theoretical-study of electron-transport in gallium nitride", J. Appl. Phys.,77 (1995) 2834-2836.
6. U. V. Bhapkar and M. S. Shur, "Monte Carlo calculation of velocity-field characteristics of wurtzite GaN",J. Appl. Phys., 82 (1997) 1649-1655.
7. B. L. Gelmont, M. S. Shur, and M.A. Stroscio, in Proceedings of ISDRS-1997, Univ. of Virginia, (1998) 389-392.
8. N. A. Zakhleniuk, C. R. Bennett, B. K. Ridley, and M. Babiker, "Multisubband hot-electron transport in GaN-based quantum wells", Appl. Phys. Lett., 75 (1998) 2485-2487.
9. D. K. Ferry, Semiconductors (Macmillan, New-York, 1991).
10. V. V. Mitin, V. A. Kochelap, and M. Stroscio, Quantum Heterostructures for Microelectronics and Optoelectronics (Cambridge University Press, Ney-York, 1999).
11. B. E. Foutz, L. E. Eastman, U. V. Bhapkar, and M. S. Shur, "Comparison of high field electron transport in GaN and GaAs", Appl. Phys. Lett., 70 (1997) 2849-2851.
12. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. E. Eastman, "Transient electron transport in wurtzite GaN, InN, and AlN", J. Appl. Phys., 85 (1999) 7727-7734.
13. E. W. S. Caetano, R. N. Costa Filho, V. N. Freire, and J. A. P. da Costa, "Velocity overshoot in zincblende and wurtzite GaN", Solid State Commun., 110 (1999) 469-472.
14. C. G. Rodrigues, V. N. Freire, A. R. Vasconcellos, and R. Luzzi, "Velocity over-shoot onset in nitride semiconductors", Appl. Phys. Lett., 76 (2000) 1893-1895.
15. R. Stratton, "The influence of interelectronic collisions on conduction and break-down in covalent semi-conductors", Proc. Roy. Soc. (London), A242 (1957) 355-373.
16. E. M. Conwell, High Field Transport in Semiconductors (Academic Press, New York, 1967).
17. The former case is achieved in narrow-gap materials like InSb, where the small effective mass facilitates the acceleration and the band-gap is less than the inter-valley distances. In GaAs the critical runaway field is about 3kV/cm, i.e., it al-most coincides with the threshold field of electron transfer from the central to satellite valleys.
18. In the low-dimensional structures other scattering mechanisms can lead to the runaway effect, see, for example, B. K. Ridley and N. A. Zakhleniuk, "Hot electrons under quantization conditions. 1. Kinematics", J. Phys.:Condensed Matter, 8 (1996) 8525-8537; A. P. Dmitriev, V. Yu. Kachorovskii, M. S. Shur, and M. Stroscio, "Electron runaway and negative differential mobility in two-dimensional electron gas in elementary semiconductors", Solid State Commun. 113 (2000) 565-568.
19. In the low-dimensional structures other scattering mechanisms can lead to the runaway effect, see, for example, B. K. Ridley and N. A. Zakhleniuk, "Hot electrons under quantization conditions. 1. Kinematics", J. Phys.:Condensed Matter, 8 (1996) 8525-8537; A. P. Dmitriev, V. Yu. Kachorovskii, M. S. Shur, and M. Stroscio, "Electron runaway and negative differential mobility in two-dimensional electron gas in elementary semiconductors", Solid State Commun. 113 (2000) 565-568.
20. K. K. Thornber and R. P. Feynman, "Velocity acquired by an electron in a finite electric field in a polar crystal", Phys. Rev. B 1 (1970) 4099.
21. M. S. Shur, A. D. Bykhovski, R. Gaska, M. A. Khan and J. W. Yang, "AlGaNaN-AlInGaN induced base transistor", Appl. Phys. Lett., 76 (2000) 3298-3300.
22. Applicability of an approach used in this paper for nitrides has been analyzed recently in S. M. Komirenko, K. W. Kim, M. A. Stroscio, and M. Dutta, "Applicability of the Fermi golden rule and the possibility of low-field runaway transport in nitrides", J. Phys.: Condensed Matter 13 (2001) 6233-6246, where a possibility of realization of low-field runaway in GaN and AlN has also been suggested.
23. I. I. Vosilius, I. B. Levinson, "Generation of optical phonons and strongly-anisotropic galvano-magnetic effects under high electric fields", Zh. Eksp. Teor. Fiz. 50, (1966) 1660-1665 [Soviet Phys. JETP 25 (1967) 672].
24. I. I. Vosilius, I. B. Levinson, "Generation of optical phonons and strongly-anisotropic galvano-magnetic effects under high electric fields", Zh. Eksp. Teor. Fiz. 50, (1966) 1660-1665 [Soviet Phys. JETP 25 (1967) 672].
25. Note that in 1 μ-length GaAs diode the electron transport with sequential single-phonon emission was observed at the electric fields below the runaway threshold: T. W. Hickmott, P. M. Solomon, F. F. Fang, and F. Stern, "Sequential Single-Phonon Emission in GaAs-AlxGal-xAs Tunnel Junctions", Phys. Rev. Lett., 52 (1984) 2053-2056; see also A. E. Belyaev, S. A. Vitusevich, R. V. Konakova, T. Figielski, A. Makosa, T. Wosinski and L. N. Kravchenko, "Tunnel current oscillations in a GaAs/AlAs double-barrier heterostructure" JETP Lett., 60 (1994) 416-419.
26. Note that in 1 μ-length GaAs diode the electron transport with sequential single-phonon emission was observed at the electric fields below the runaway threshold: T. W. Hickmott, P. M. Solomon, F. F. Fang, and F. Stern, "Sequential Single-Phonon Emission in GaAs-AlxGal-xAs Tunnel Junctions", Phys. Rev. Lett., 52 (1984) 2053-2056; see also A. E. Belyaev, S. A. Vitusevich, R. V. Konakova, T. Figielski, A. Makosa, T. Wosinski and L. N. Kravchenko, "Tunnel current oscillations in a GaAs/AlAs double-barrier heterostructure" JETP Lett., 60 (1994) 416-419.
27. A. F. J. Levi, J. R. Hayes, P. M. Platzman, and W. Weigmann, "Injected-Hot-Electron Transport in GaAs", Phys. Rev. Lett., 55 (1985) 2071-2073.
28. M. Heiblum, M. L. Nathan, D. C. Thomas, and C. M. Knoedier, "Direct Observation of Ballistic Transport in GaAs", Phys. Rev. Lett., 55 (1985) 2200-2203.
29. It is necessary to note that velocity oscillations with the distance, as presented in Fig. 4, could not be reproduced in the approach undertaken in Ref 12. Mainly, it is because of the averaging procedure of the Monte Carlo method in the time domain and further recalculation of the velocity as a function of the distance. General discussion of free electron flights interrupted by sudden optical phonon emission is dated back to papers by W. Shockley, Bell. Syst. Techn. J., 30 (1951) 990 and P. J. Price, IBM J. Res. Develop., 3 (1959) 191.
30. It is necessary to note that velocity oscillations with the distance, as presented in Fig. 4, could not be reproduced in the approach undertaken in Ref 12. Mainly, it is because of the averaging procedure of the Monte Carlo method in the time domain and further recalculation of the velocity as a function of the distance. General discussion of free electron flights interrupted by sudden optical phonon emission is dated back to papers by W. Shockley, Bell. Syst. Techn. J., 30 (1951) 990 and P. J. Price, IBM J. Res. Develop., 3 (1959) 191.
31. S. M. Sze, ed. High-Speed Semiconductor Devices (Wiley, New York, 1990).
32. L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfey, J. S. Speck, M. W. Rodwell, S. P. DenBaars and U. K. Mishra, "GaN HBT: toward an RF device", IEEE Electron. Devices, 48 (2001) 543-551.
33. P. Asbeck, private communication.
34. Z. S. Gribnikov, K. Hess, and G. A. Kosinovsky, "Nonlocal and nonlinear transport in semiconductors: Real-space transfer effects", J. Appl. Phys., 77 (1995) 1337-1373.
35. J. R. Pierce, J. Appl. Phys., 19 (1948) 231.
36. M. C. Steel and B. Vural, Wave Interactions in Solid State Plasmas (McGill Hill, New-York, 1969).
37. V. L. Gurevich, Soviet Phys., Solid State, 4 (1962) 1380.
38. I. A. Chaban, A. A. Chaban, Soviet Physics, Solid State, 6 (1964) 2411.
39. J. B. Gunn, "Quantum Theory of Lattice-Wave Amplification in Semiconductors", Phys. Rev., 138 (1965) A1721-A1726.
40. S. M. Komirenko, K. W. Kim, V. A. Kochelap, I. Fedorov, M. A. Stroscio, "Coherent optical phonon generation by the electric current in quantum wells", Appl. Phys. Lett., 77 (2000) 4178-4180; "Generation of coherent confined LO phonons under the drift of two-dimensional electrons", Phys. Rev. B, 63 (2001) 165308.
41. S. M. Komirenko, K. W. Kim, V. A. Kochelap, I. Fedorov, M. A. Stroscio, "Coherent optical phonon generation by the electric current in quantum wells", Appl. Phys. Lett., 77 (2000) 4178-4180; "Generation of coherent confined LO phonons under the drift of two-dimensional electrons", Phys. Rev. B, 63 (2001) 165308.