Photo-formation of interfacial layers during pulsed laser deposition of high-k dielectrics on silicon

Thin Solid Films

Volumn 453-454, Issue , 2004, Pages 411-416

  Howard, J M ^a   Bassim, N D ^a   Craciun, V ^a   Singh, R K ^a  

^a University of Florida   (United States)

Author keywords

High k; Laser ablation; Thin films; Ultraviolet; Yttrium oxide; Zirconium oxide

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER ABLATION; MOS DEVICES; PERMITTIVITY; PULSED LASER DEPOSITION; SILICON; THIN FILMS; VACUUM; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM COMPOUNDS; ZIRCONIUM COMPOUNDS;

HIGH-K; YTTRIUM OXIDE;

DIELECTRIC MATERIALS;

EID: 1542530842     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.275     Document Type: Conference Paper

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