Ion beam analysis of ion-assisted deposited amorphous GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 620-624

  Kennedy, V J ^a   Markwitz, A ^a   Lanke, U D ^b   McIvor, A ^b   Trodahl, H J ^b   Bittar, A ^c  

^a GNS SCIENCE   (New Zealand)

^b VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^c CALLAGHAN INNOVATION   (New Zealand)

Author keywords

a GaN; ERDA; NRA; Optoelectronic materials; RBS

Indexed keywords

GALLIUM; GALLIUM NITRIDE; HYDROGEN; ION BEAM ASSISTED DEPOSITION; ION BEAMS; NITROGEN; OPTICAL PROPERTIES; OXYGEN; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES;

ELASTIC RECOIL DETECTION ANALYSIS (ERDA);

AMORPHOUS FILMS;

EID: 0036569385     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01279-4     Document Type: Conference Paper

References (17)