Source and drain formation by using plasma doping and laser melt annealing technique for deca-nanometer SOI MOSFETs

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Maeng, Sunglyul ^a   Kang, Tae Woong ^a   Cho, Won Ju ^a   Jang, Moon Gyu ^a   Lee, Seong Jae ^a   Park, Kyung Wan ^a   Im, Kiju ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Deca nanometer MOSFET; Excimer laser annealing(ELA); Fully depleted silicon on insulator(FD SOI); Plasma doping

Indexed keywords

EID: 0037307355     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

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