-
1
-
-
0000849397
-
Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures
-
"Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures," G. Neubauer, A. Erickson, C.C. Williams, J.J. Kopanski, M. Rodgers, D. Adderton, J. Vac. Sci. Technol., B14, 426-432 (1996)
-
(1996)
J. Vac. Sci. Technol.
, vol.B14
, pp. 426-432
-
-
Neubauer, G.1
Erickson, A.2
Williams, C.C.3
Kopanski, J.J.4
Rodgers, M.5
Adderton, D.6
-
2
-
-
0000720788
-
Characterization of two-dimensional dopant profiles: Status and review
-
"Characterization of two-dimensional dopant profiles: Status and review", A.C. Diebold, M.R. Kump, J.J. Kopanski, D.G. Seiler, J. Vac. Sci. Technol., B14, 196-121 (1996).
-
(1996)
J. Vac. Sci. Technol.
, vol.B14
, pp. 196-121
-
-
Diebold, A.C.1
Kump, M.R.2
Kopanski, J.J.3
Seiler, D.G.4
-
3
-
-
0002312029
-
Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis
-
"Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis", A.K. Henning, T. Hochwitz, Mat. Sci. Eng., B42, 88-98 (1996).
-
(1996)
Mat. Sci. Eng.
, vol.B42
, pp. 88-98
-
-
Henning, A.K.1
Hochwitz, T.2
-
4
-
-
0010685919
-
Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
-
"Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices," T. Yamamoto, Y. Suzuki, M. Miyashita, H. Sugimura, N. Nakagiri, Jpn. J. Appl. Phys., 36, 1922-1926 (1997).
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 1922-1926
-
-
Yamamoto, T.1
Suzuki, Y.2
Miyashita, M.3
Sugimura, H.4
Nakagiri, N.5
-
6
-
-
1542373461
-
The characterization of process induced damage of silicon wafer processing - Mechanical damage
-
"The characterization of process induced damage of silicon wafer processing - mechanical damage", Han S. Oh, Jong R. Kim, Tae H. Kim, Jae J. Yu, Hong L. Lee, Ju H. Lee, D. Rice, Electrochem. Soc. Proc., 99-1, 101-108 (1999).
-
(1999)
Electrochem. Soc. Proc.
, vol.99
, Issue.1
, pp. 101-108
-
-
Oh, H.S.1
Kim, J.R.2
Kim, T.H.3
Yu, J.J.4
Lee, H.L.5
Lee, J.H.6
Rice, D.7
-
7
-
-
0035051499
-
Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
-
"Surface damage formation during ion-beam thinning of samples for transmission electron microscopy", J.P. McCaffery, M.W. Phaneuf, L.D. Madsen, Ultramicroscopy, 87, 97-104 (2001).
-
(2001)
Ultramicroscopy
, vol.87
, pp. 97-104
-
-
McCaffery, J.P.1
Phaneuf, M.W.2
Madsen, L.D.3
-
8
-
-
23044517662
-
Effects of ion species and energy on the amorphization of Si during FIB TEM sample preparation as determined by computational and experimental methods
-
"Effects of ion species and energy on the amorphization of Si during FIB TEM sample preparation as determined by computational and experimental methods," R.B. Jamison, A.J. Mardinly, D.W. Susnitzky, R. Gronsky, MSA Proceedings, 6, 526-527 (2000).
-
(2000)
MSA Proceedings
, vol.6
, pp. 526-527
-
-
Jamison, R.B.1
Mardinly, A.J.2
Susnitzky, D.W.3
Gronsky, R.4
-
9
-
-
1542343782
-
-
FEI 830, FEI Corporation, Hillsboro OR
-
FEI 830, FEI Corporation, Hillsboro OR.
-
-
-
-
10
-
-
1542283531
-
-
0.02 um colloidal silica, Item# 180-40010, Allied High Tech Products
-
0.02 um colloidal silica, Item# 180-40010, Allied High Tech Products.
-
-
-
-
11
-
-
84862047557
-
-
Felt pad "Red Final C", Item# 90-150-350, Allied High Tech Products, Rancho Dominguez, CA
-
Felt pad "Red Final C", Item# 90-150-350, Allied High Tech Products, Rancho Dominguez, CA.
-
-
-
-
12
-
-
1542343783
-
-
D-3000, Digital Instruments, Santa Barbara CA
-
D-3000, Digital Instruments, Santa Barbara CA.
-
-
-
|