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Volumn , Issue , 2002, Pages 467-471

Site specific 2-D implant profiling using FIB assisted SCM

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM (FIB); SCANNING CAPACITANCE MICROSCOPY (SCM);

EID: 1542360084     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (12)
  • 1
    • 0000849397 scopus 로고    scopus 로고
    • Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures
    • "Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures," G. Neubauer, A. Erickson, C.C. Williams, J.J. Kopanski, M. Rodgers, D. Adderton, J. Vac. Sci. Technol., B14, 426-432 (1996)
    • (1996) J. Vac. Sci. Technol. , vol.B14 , pp. 426-432
    • Neubauer, G.1    Erickson, A.2    Williams, C.C.3    Kopanski, J.J.4    Rodgers, M.5    Adderton, D.6
  • 2
    • 0000720788 scopus 로고    scopus 로고
    • Characterization of two-dimensional dopant profiles: Status and review
    • "Characterization of two-dimensional dopant profiles: Status and review", A.C. Diebold, M.R. Kump, J.J. Kopanski, D.G. Seiler, J. Vac. Sci. Technol., B14, 196-121 (1996).
    • (1996) J. Vac. Sci. Technol. , vol.B14 , pp. 196-121
    • Diebold, A.C.1    Kump, M.R.2    Kopanski, J.J.3    Seiler, D.G.4
  • 3
    • 0002312029 scopus 로고    scopus 로고
    • Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis
    • "Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis", A.K. Henning, T. Hochwitz, Mat. Sci. Eng., B42, 88-98 (1996).
    • (1996) Mat. Sci. Eng. , vol.B42 , pp. 88-98
    • Henning, A.K.1    Hochwitz, T.2
  • 4
    • 0010685919 scopus 로고    scopus 로고
    • Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
    • "Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices," T. Yamamoto, Y. Suzuki, M. Miyashita, H. Sugimura, N. Nakagiri, Jpn. J. Appl. Phys., 36, 1922-1926 (1997).
    • (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 1922-1926
    • Yamamoto, T.1    Suzuki, Y.2    Miyashita, M.3    Sugimura, H.4    Nakagiri, N.5
  • 6
    • 1542373461 scopus 로고    scopus 로고
    • The characterization of process induced damage of silicon wafer processing - Mechanical damage
    • "The characterization of process induced damage of silicon wafer processing - mechanical damage", Han S. Oh, Jong R. Kim, Tae H. Kim, Jae J. Yu, Hong L. Lee, Ju H. Lee, D. Rice, Electrochem. Soc. Proc., 99-1, 101-108 (1999).
    • (1999) Electrochem. Soc. Proc. , vol.99 , Issue.1 , pp. 101-108
    • Oh, H.S.1    Kim, J.R.2    Kim, T.H.3    Yu, J.J.4    Lee, H.L.5    Lee, J.H.6    Rice, D.7
  • 7
    • 0035051499 scopus 로고    scopus 로고
    • Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
    • "Surface damage formation during ion-beam thinning of samples for transmission electron microscopy", J.P. McCaffery, M.W. Phaneuf, L.D. Madsen, Ultramicroscopy, 87, 97-104 (2001).
    • (2001) Ultramicroscopy , vol.87 , pp. 97-104
    • McCaffery, J.P.1    Phaneuf, M.W.2    Madsen, L.D.3
  • 8
    • 23044517662 scopus 로고    scopus 로고
    • Effects of ion species and energy on the amorphization of Si during FIB TEM sample preparation as determined by computational and experimental methods
    • "Effects of ion species and energy on the amorphization of Si during FIB TEM sample preparation as determined by computational and experimental methods," R.B. Jamison, A.J. Mardinly, D.W. Susnitzky, R. Gronsky, MSA Proceedings, 6, 526-527 (2000).
    • (2000) MSA Proceedings , vol.6 , pp. 526-527
    • Jamison, R.B.1    Mardinly, A.J.2    Susnitzky, D.W.3    Gronsky, R.4
  • 9
    • 1542343782 scopus 로고    scopus 로고
    • FEI 830, FEI Corporation, Hillsboro OR
    • FEI 830, FEI Corporation, Hillsboro OR.
  • 10
    • 1542283531 scopus 로고    scopus 로고
    • 0.02 um colloidal silica, Item# 180-40010, Allied High Tech Products
    • 0.02 um colloidal silica, Item# 180-40010, Allied High Tech Products.
  • 11
    • 84862047557 scopus 로고    scopus 로고
    • Felt pad "Red Final C", Item# 90-150-350, Allied High Tech Products, Rancho Dominguez, CA
    • Felt pad "Red Final C", Item# 90-150-350, Allied High Tech Products, Rancho Dominguez, CA.
  • 12
    • 1542343783 scopus 로고    scopus 로고
    • D-3000, Digital Instruments, Santa Barbara CA
    • D-3000, Digital Instruments, Santa Barbara CA.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.