Identification of Subtle Isb Failure Mechanisms

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1999, Pages 349-355

  Wang, N ^a   Zou, R ^a   Wu, J ^a   Daniel, S ^a   Stevenson, W ^a  

^a CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW STANDBY CURRENT (ISB); NON-FAULT RESISTIVE DEFECTS; SIGNAL TIMING REQUIREMENTS;

CRYSTAL GROWTH; DEFECTS; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; POLYSILICON; STATIC RANDOM ACCESS STORAGE; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

CMOS INTEGRATED CIRCUITS;

EID: 1542300893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. K. J. Giewont, D. B. Hunt and K. M. Hummler, "Probeless Voltage Contrast Using a Focused Ion Beam for Opens and Shorts Defect Isolation of Ultra-large Scale Integration Technologies", J. Vac. Sci. Technol. B 15(4), Jul/Aug 1997
2. P. Girard, Scanning Microscopy, Vol.2, No.1 1998, pp.151-160
3. Luo; Xiaodo Song, "Voltage Contrast Application on IM SRAM Single Bit Failure Analysis", ISTFA 97 proceedings
4. Tamatsuka; K. Miki, "Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-nano Ampere Current Breakdown", Solid State Phenomena, Vol.63-64 (1998) pp.395-406
5. H. Bender; J. Vanhellemont; R. Schmolke, "High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochraski Silicon", Jpn J. Appl. Phys. Vol.36(1997)pp. L1217-L1220. Part2, No.9A/B, 15 sept.1997
6. J. Furukawa; T. Shiota; M. Kita; T. Shingyouji; Y. Shimanuki, "The Dielectric Breakdown Characteristics of MOS Capacitor", Diagnostic Techniques for Semiconductor Materials and Devices, Montreal, Que.,Canada 6-8 May 1997
7. M. Itsumi: Direct observation and elimination of defects in gate oxide for reliable MOSLSIs, Electrochemical Society Proceedings, Vol.97-12
8. Y. Yanase; T. One; T. Kitamura; H. Horie; T. Ochiai; S. Okamato; S. Tsuya, "A New Method for Transmission Electron Microscope Observation of Grow-in Defects in As-Grown Czochralski Silicon (111) Crystals, Jpn. J. of Appl. Phy., Part 1, Vol. 36, No. 10, p.6200-3, 0021-4922
9. 2 Film-Induced Stress in Silicon", J. Electrochem. Soc., Vol 144, No. 1, January 1997
10. nd Int. Workshop on Moldelling in Crystal Growth, Durbury, Belgium, 13-16 Oct., 1996
11. th Int. Sym. on high Purity Silicon, p. 117-31