Cavity formation due to Si3N4/SiO2 film-induced stress in silicon

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 340-345

  Isomae, Seiichi ^a   Tamaki, Yoichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ETCHING; HEAT TREATMENT; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICA; SILICON NITRIDE; SINGLE CRYSTALS; STRESSES; THERMAL EFFECTS;

CAVITY FORMATION; SECCO ETCHING;

SEMICONDUCTING SILICON;

EID: 0030817467     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837406     Document Type: Article

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