Voltage Contrast Application on 1M SRAM Single Bit Failure Analysis

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 1997-October, Issue , 1997, Pages 339-343

  Luo, Dongping ^a   Song, X ^a  

^a CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; VOLTAGE MEASUREMENT;

ANALYSIS APPROACH; ANALYSIS TECHNIQUES; FEATURE SIZES; FOCUSED IONS BEAMS; HIGH TEMPERATURE OPERATING LIVES; PASSIVE VOLTAGE CONTRASTS; PHYSICAL DEFECTS; SINGLE-BIT; STATIC RANDOM ACCESS MEMORY; VOLTAGE CONTRAST;

FAILURE ANALYSIS;

EID: 1542314586     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa1997p0339     Document Type: Conference Paper

References (8)

1. M. Mahanpour, II1-VsRev., V9, No.6, 46-50 (1996).
2. ID. Benzel, Hewlett-Packard I, V46, No.2, 102-6 (1995).
3. F. Marc, H. Fremont, P. Jounet, Y. Danto, Microelectron. Eng. (Netherlands), Vo1.25, No.1, 35-48 (1994).
4. T.I Aton, S.S. Mahant, S.RI Gale, M.H. Bennett, L.M.G. Harward, C.A Pico, T.L. Weaver, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vo1.8, No.6, 2041-2044 (1990).
5. E.C.G. Kirk, J.RA Cleaver, H. Ahmed, Electronics Letters Vo1.23, 585-6 (1987).
6. H. Yamashita, H. Nanatsue, Y. Hata, and S. Mayuml, IPFA'91 Proceedings, 50-54 (1991) .
7. S. Prasad, Y.C. Lu, D.K. Li, G.S. Reddy, and F. Chen, Mat. Res. Soc. Symp. Proc., vo1.338, 477-82 (1994).
8. AN. Campbell, IM. Soden, RG. Lee, and IL. Rife, Proceedings ofISTFA'95, 33-41 (1995).