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Diamond and Related Materials

Volumn 13, Issue 2, 2004, Pages 325-328

Homoepitaxial growth for surface conductive device applications

(2) Williams, Oliver A a Jackman, Richard B a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

Carrier concentrations; Diamond growth; Hall effect; Homoepitaxial; Hydrogen surface conductivity

Indexed keywords

ADSORPTION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; HALL EFFECT; HYDROGEN; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES;

SURFACE CONDUCTIVE DEVICE;

DIAMOND FILMS;

DIAMOND;

EID: 1542288013 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2003.11.004 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.