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Volumn 275, Issue 3-4, 2005, Pages 383-388

Growth of highly c-axis-oriented aluminum nitride thin films on molybdenum electrodes using aluminum nitride interlayers

(5) Kamohara, Toshihiro a Akiyama, Morito a Ueno, Naohiro a Nonaka, Kazuhiro a Tateyama, Hiroshi a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

A1. Atomic force microscopy; A1. Crystal orientation; A1. Crystallinity; A1. RF sputtering; A1. X ray diffraction; B1. AlN film

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTRODES; GRAIN GROWTH; MOLYBDENUM; NANOSTRUCTURED MATERIALS; SILICA; SPUTTERING; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE (AIN) FILMS; ALUMINUM NITRIDE INTERLAYERS; CRYSTALLINITY; RF SPUTTERING;

FILM GROWTH;

EID: 14844363885 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.014 Document Type: Article

Times cited : (37)

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