Consideration of an oxide-nitride-oxide-nitride layer for the inter-poly dielectric of a flash EEPROM cell

Journal of the Korean Physical Society

Volumn 41, Issue 5, 2002, Pages 801-804

  Shin, Bong Jo ^a   Park, Keun Kyung ^a   Yang, Sung Il ^b  

^a Chungbuk National University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Data retention; EEPROM; Flash

Indexed keywords

EID: 0036864467     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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