Source-bias program characteristics of a submicron stacked-gate flash EEPROM cell

Journal of the Korean Physical Society

Volumn 39, Issue 2, 2001, Pages 374-377

  Shin, Bong Jo ^a   Park, Keun Hyung ^a   Kim, Jang Han ^a   Choi, Jung Bum ^a  

^a Chungbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035535686     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. Myung Kwan Cho and Dae M. Kim, IEEE Electron Device Lett. 21, (2000).
2. Boaz Eitan, Short Course: Non-Volatile Memory Technologies Manuscript, IEEE (San Fransisco, U.S.A., 1990), p. 35.
3. K. Prall, W. Kinney and J. Macro, IEEE Trans. Electron Dev. 34, 2463 (1987).
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 474.