Dislocation multiplication in silicon at the onset of plasticity observed by in situ synchrotron X-ray topography

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10045-10058

  Jacques, Alain ^a,c   Vallino, Frédéric ^a,c   Serbena, Francisco ^b,c   George, Amand ^a,c  

^a INSTITUT JEAN LAMOUR   (France)

^b STATE UNIVERSITY OF PONTA GROSSA   (Brazil)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CREEP; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); PLASTIC DEFORMATION; SINGLE CRYSTALS; SYNCHROTRONS; TENSILE STRESS; THERMAL EFFECTS; VICKERS HARDNESS TESTING; X RAY ANALYSIS;

DISLOCATION MULTIPLICATION; FRANK-READ MECHANISMS;

SEMICONDUCTING SILICON;

EID: 0034499438     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/304     Document Type: Article

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