Characterization of defect structures in magnetic liquid encapsulated Kyropoulos grown InP single crystals

Journal of Crystal Growth

Volumn 181, Issue 1-2, 1997, Pages 17-25

  Chung, H ^a   Si, W ^a   Dudley, M ^a   Bliss, D F ^b   Kalan, R ^c   Maniatty, A ^c   Zhang, H ^d   Prasad, V ^d  

^a STONY BROOK UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d Stony Brook University   (United States)

Author keywords

Dislocations and twins; Growth striations; InP; Slip bands; X ray topography

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); MAGNETIC FIELDS; MORPHOLOGY; PLASTIC DEFORMATION; SEMICONDUCTING INDIUM PHOSPHIDE; SHEAR STRESS; SINGLE CRYSTALS; STRESS ANALYSIS; THERMAL STRESS;

DEFECT STRUCTURE; GROWTH STRIATION; KYROPOULOS GROWTH; SLIP BAND; X RAY TOPOGRAPHY;

CRYSTAL GROWTH;

EID: 0031549559     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00271-6     Document Type: Article

References (18)

1. M. Azzaz, J. Michel, A. George, Philos. Mag. A 69 (1994) 903.
2. D.F. Bliss, R.M. Hilton, J.A. Adamski, J. Crystal Growth 128 (1993) 451.
3. R.W. Series, D.T.J. Hurle, J. Crystal Growth 113 (1991) 305.
4. G. Jacob, J. Crystal Growth 58 (1982) 455.
5. A. Huber, N.T. Linh, J. Crystal Growth 29 (1975) 80.
6. S. Mahajan, A.K. Chin, J. Crystal Growth 54 (1981) 138.
7. S. Tohno, A. Katsui, J. Crystal Growth 74 (1986) 362.
8. M. Dudley, Applications of synchrotron radiation techniques to materials science, in: D.L. Perry, R.L. Stockbauer, N.D. Shinn, K.L. D'Amico, L.J. Terminello (Eds.), Mater. Res. Soc. Symp. Proc., vol. 307, Pittsburgh PA, 1993, p. 213.
9. M. Dudley, in: D. Bloor, R.J. Brook, M.C. Flemings, S. Mahajan (Eds.), Encyclopedia of Advanced Materials, vol. 4, Pergamon, Oxford, 1994, p. 2950.
10. H. Chung, W. Si, M. Dudley, A. Anselmo, D.F. Bliss, A. Maniatty, H. Zhang, V. Prasad, J. Crystal Growth 174 (1997) 230.
11. S. Wang, M. Dudley, W. Huang, C.H. Carter Jr, V.F. Tsvetkov, C. Fazi, in: W.M. Bullis, D.G. Seiler, A.C. Diebold (Eds.), Semiconductor Characterization Present Status and Future Needs, AIP, New York, 1996, p. 278.
12. H. Zhang, V. Prasad, D.F. Bliss, J. Crystal Growth (1997), in press.
13. Y.F. Zou, G.-X. Wang, H. Zhang, V. Prasad, D.F. Bliss, J. Crystal Growth, submitted.
14. A. Authier, A.R. Lang, J. Appl. Phys. 35 (1964) 1956.
15. J. Wu, T. Fanning, M. Dudley, V. Shastry, P. Anderson, Defect engineering in semiconductor growth, processing and device technology, in: S. Ashok, J. Chevallier, K. Sumino, E. Weber (Eds.), Mater. Res. Soc. Symp. Proc., vol. 262, Pittsburgh PA, 1993, p. 265.
16. S. Adachi, J. Brice (Eds.), Properties of Indium Phosphide, INSPEC, The Institution of Electrical Engineerings, New York, 1991.
17. V.M. Glazov, K. Davletov, A. Ya Nashel'skii, M.M. Mamedov, Russ. J. Phys. Chem. 51 (1977) 1496.
18. A.S. Jordan, G.T. Brown, B. Cockayne, D. Brasen, W.A. Bonner, J. Appl. Phys. 58 (1985) 4383.