Radiation enhanced diffusion of implanted platinum in silicon guided by helium co-implantation for arbitrary control of platinum profile

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 230, Issue 1-4, 2005, Pages 225-229

  Hazdra, Pavel ^a   Vobecký, Jan ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Diffusion; Helium; Lifetime control; Platinum; Radiation defects; Silicon

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ENTHALPY; HELIUM; ION IMPLANTATION; IONIZATION; PLATINUM; RADIATION DAMAGE; SILICON; VOLTAGE CONTROL;

CO-IMPLANTATION; HIGH-ENERGY PROTONS; LIFETIME CONTROL; RADIATION DEFECTS;

RADIATION EFFECTS;

EID: 14744303795     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.045     Document Type: Conference Paper

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